| PART |
Description |
Maker |
| PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆，R2=10千欧
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?
|
NXP Semiconductors N.V.
|
| PDTC144EE PDTC144EEF PDTC144EK PDTC144EM PDTC144E |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 47 k楼?, R2 = 47 k楼?
NPN resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
|
NXP Semiconductors N.V.
|
| PUMH20 PEMH20 PUMH20115 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTD123TT PDTD123TK PDTD123TS |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open NPN配电阻型晶体管：耐压0V，电00mAR1 = 2.2 千欧 R2 =开
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
|
NXP Semiconductors N.V.
|
| PDTC123Y PDTC123YU PDTC123YE PDTC123YK PDTC123YM P |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT323 (SC-70); Container: Tape reel smd 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PIMN31 |
50V NPN/NPN double resistor-equipped transistor
|
NXP Semiconductors
|
| PDTC114EE |
NPN resistor-equipped transistor
|
Philips
|
| PDTC114YE |
NPN resistor-equipped transistor
|
Philips
|
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